Professor V. Pershenkov received his Doctor of Technical Science degree in Electrical Engineering from Moscow Engineering Physics Institute in 1988. Head of department “Micro – and nanoelectronics” of National Research Nuclear University “MEPhI”. His research interests are related to radiation physics and hardness assurance of microelectronic structures for space application, the ling-term prediction bipolar devices response in space environments. Professor V. Pershenkov is author of the conversion hydrogen-electron model of the radiation-induced silicon/dioxide interface traps buildup, which allows to numerically describing the enhanced low dose rate sensitivity effect for bipolar transistors and operational amplifiers. He has more than 300 journal publications and 20 patents. The scientific activity of Professor V. Pershenkov is illustrated in more than 100 reports in Russia, Moldova, USA, France, Great Britain, China conferences in field of microelectronic devices radiation hardness.